MMBD2835LT1G, MMBD2836LT1G, SMMBD2835LT1G
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA
= 25
?C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage (IR
= 100
Adc)
MMBD2835LT1G, SMMBD2835LT1G
MMBD2836LT1G
V(BR)
35
75
?
?
Vdc
Reverse Voltage Leakage Current (Note 3)
(VR
= 30 Vdc)
MMBD2835LT1G, SMMBD2835LT1G
(VR
= 50 Vdc)
MMBD2836LT1G
IR
?
?
100
100
nAdc
Diode Capacitance (VR
= 0 V, f = 1.0 MHz)
CT
?
4.0
pF
Forward Voltage
(IF
= 10 mAdc)
(IF
= 50 mAdc)
(IF
= 100 mAdc)
VF
?
?
?
1.0
1.0
1.2
Vdc
Reverse Recovery Time (IF
= I
R
= 10 mAdc, I
R(REC)
= 1.0 mAdc) (Figure 1)
trr
?
4.0
ns
3. For each individual diode while the second diode is unbiased.
Notes: 1. A 2.0 k
variable resistor adjusted for a Forward Current (I
F) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak)
is equal to 10 mA.
Notes: 3. tp
? t
rr
+10 V
2.0 k
820?
0.1 F
DUT
VR
100 H
0.1 F
50
OUTPUT
PULSE
GENERATOR
50
INPUT
SAMPLING
OSCILLOSCOPE
tr
tp
t
10%
90%
IF
IR
trr
t
iR(REC)
= 1.0 mA
OUTPUT PULSE
(IF
= I
R
= 10 mA; MEASURED
at iR(REC)
= 1.0 mA)
IF
INPUT SIGNAL
Figure 1. Recovery Time Equivalent Test Circuit
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